DatasheetsPDF.com

STGB8NC60KD Dataheets PDF



Part Number STGB8NC60KD
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description short circuit rugged IGBT
Datasheet STGB8NC60KD DatasheetSTGB8NC60KD Datasheet (PDF)

STGB8NC60KD, STGD8NC60KD STGF8NC60KD, STGP8NC60KD Datasheet 8 A, 600 V short-circuit rugged IGBT TAB 3 1 D2 PAK TAB 23 1 DPAK TAB 3 2 1 TO-220FP TO-220 1 23 C(2, TAB) G(1) E(3) NG1E3C2T Features • Lower on voltage drop (VCE(sat)) • Lower Cres / Cies ratio (no cross-conduction susceptibility) • Very soft ultra fast recovery antiparallel diode • Short-circuit withstand time 10 μs Applications • High frequency motor controls • SMPS and PFC in both hard switch and resonant topologi.

  STGB8NC60KD   STGB8NC60KD



Document
STGB8NC60KD, STGD8NC60KD STGF8NC60KD, STGP8NC60KD Datasheet 8 A, 600 V short-circuit rugged IGBT TAB 3 1 D2 PAK TAB 23 1 DPAK TAB 3 2 1 TO-220FP TO-220 1 23 C(2, TAB) G(1) E(3) NG1E3C2T Features • Lower on voltage drop (VCE(sat)) • Lower Cres / Cies ratio (no cross-conduction susceptibility) • Very soft ultra fast recovery antiparallel diode • Short-circuit withstand time 10 μs Applications • High frequency motor controls • SMPS and PFC in both hard switch and resonant topologies • Motor drives Description These devices are very fast IGBTs developed using advanced PowerMESH technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. Product status links STGB8NC60KD STGD8NC60KD STGF8NC60KD STGP8NC60KD DS5489 - Rev 3 - June 2023 For further information contact your local STMicroelectronics sales office. www.st.com STGB8NC60KD, STGD8NC60KD, STGF8NC60KD, STGP8NC60KD Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter D²PAK, TO-220 Value DPAK VCES Collector-emitter voltage (VGE = 0 V) 600 Continuous collector current at TC = 25 °C 15 IC(1) Continuous collector current at TC = 100 °C 8 ICL(2) Turn-off latching current 30 ICP(3) Pulsed collector current 30 VGE Gate-emitter voltage ±20 IF Diode RMS forward current at TC = 25 °C 7 IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 20 VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s, TC = 25 °C) tscw Short-circuit withstand time VCE = 0.5, VCES, TJ = 125 °C, RG = 10 Ω, VGE = 12 V 10 PTOT Total power dissipation at TC = 25 °C 65 62 Tstg Storage temperature range TJ Operating junction temperature range -55 to 150 1. Calculated according to the iterative formula: IC TC = TJ max − TC RthJC × VCE sat max TJ max , IC TC 2. Vclamp = 80% VCES, TJ =150 °C, RG = 10 Ω, VGE = 15 V. 3. Pulse width limited by maximum junction temperature and turn-off within RBSOA. Unit TO-220FP V 7 A 4 A A V A A 2.5 kV μs 24 W °C °C Table 2. Thermal data Symbol Parameter RthJC RthJA Thermal resistance, junction-to-case IGBT Thermal resistance, junction-to-case diode Thermal resistance, junction-to-ambient D²PAK, TO-220 1.9 4 62.5 Value DPAK 2.0 4.5 100 Unit TO-220FP 5.1 °C/W 7 62.5 °C/W DS5489 - Rev 3 page 2/31 STGB8NC60KD, STGD8NC60KD, STGF8NC60KD, STGP8NC60KD Electrical characteristics 2 Electrical characteristics TC = 25 °C unless otherwise specified Table 3. Static Symbol Parameter Test conditions V(BR)CES Collector-emitter breakdown voltage VGE = 0 V, IC = 1 mA VCE(sat) Collector-emitter saturation voltage VGE = 15 V, IC = 3 A VGE = 15 V, IC = 3 A, TJ = 125 °C VGE(th) Gate threshold voltage VCE = VGE, IC = 250 μA ICES Collector cut-off current VGE = 0 V, VCE = 600 V VGE = 0 V, VCE = 600 V, TJ = 125 °C (1) IGES Gate-emitter leakage current VCE = 0 V, VGE = ±20 V gfs(2) Forward transconductance VCE = 15 V, IC = 3 A 1. Specified by design, not tested in production. 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%. Min. Typ. Max. Unit 600 V 2.2 2.75 V 1.8 4.5 6.5 V 0.15 mA 1 ±100 nA 1.9 S Symbol Cies Coes Cres Qg Qge Qgc Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-emitter charge Gate-collector charge Table 4. Dynamic Test conditions VCE = 25 V, f = 1 MHz, VGE = 0 V VCC = 390 V, IC = 3 A, VGE = 0 to 15 V (see Figure 19. Gate charge test circuit) Min. Typ. Max. Unit - 380 - pF - 46 - pF - 8.5 - pF - 19 - nC - 5 - nC - 9 - nC DS5489 - Rev 3 page 3/31 STGB8NC60KD, STGD8NC60KD, STGF8NC60KD, STGP8NC60KD Electrical characteristics Symbol td(on) tr (di/dt)on td(on) tr (di/dt)on tr(Voff) td(off) tf tr(Voff) td(off) tf Table 5. Switching on/off (inductive load) Parameter Turn-on delay time Current rise time Turn-on current slope Turn-on delay time Current rise time Turn-on current slope Off voltage rise time Turn-off delay time Current fall time Off voltage rise time Turn-off delay time Current fall time Test conditions VCC = 390 V, IC = 3 A, RG = 10 Ω, VGE = 15 V (see Figure 17. Test circuit for inductive load switching and Figure 20. Switching waveform) VCC = 390 V, IC = 3 A, RG = 10 Ω, VGE = 15 V, TJ = 125 °C (see Figure 17. Test circuit for inductive load switching and Figure 20. Switching waveform) VCC = 390 V, IC = 3 A, RG = 10 Ω, VGE = 15 V (see Figure 17. Test circuit for inductive load switching and Figure 20. Switching waveform) VCC = 390 V, IC = 3 A, RG = 10 Ω, VGE = 15 V, TJ = 125 °C (see Figure 17. Test circuit for inductive load switching and Figure 20. Switching waveform) Min. Typ. Max. Unit - 17 - ns - 6 - ns - 655 - A/μs - 16.5 - ns - 6.5 - ns - 575 - A/μs - 33 - ns - .


STGP8NC60K STGB8NC60KD STGD8NC60KD


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)