Document
STGB8NC60KD, STGD8NC60KD STGF8NC60KD, STGP8NC60KD
Datasheet
8 A, 600 V short-circuit rugged IGBT
TAB
3 1
D2 PAK
TAB 23 1
DPAK
TAB
3 2 1
TO-220FP
TO-220
1 23
C(2, TAB)
G(1)
E(3)
NG1E3C2T
Features
•
Lower on voltage drop (VCE(sat))
•
Lower Cres / Cies ratio (no cross-conduction susceptibility)
• Very soft ultra fast recovery antiparallel diode
• Short-circuit withstand time 10 μs
Applications
• High frequency motor controls • SMPS and PFC in both hard switch and resonant topologies • Motor drives
Description
These devices are very fast IGBTs developed using advanced PowerMESH technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications.
Product status links STGB8NC60KD STGD8NC60KD STGF8NC60KD STGP8NC60KD
DS5489 - Rev 3 - June 2023 For further information contact your local STMicroelectronics sales office.
www.st.com
STGB8NC60KD, STGD8NC60KD, STGF8NC60KD, STGP8NC60KD
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
D²PAK, TO-220
Value DPAK
VCES
Collector-emitter voltage (VGE = 0 V)
600
Continuous collector current at TC = 25 °C
15
IC(1)
Continuous collector current at TC = 100 °C
8
ICL(2)
Turn-off latching current
30
ICP(3)
Pulsed collector current
30
VGE
Gate-emitter voltage
±20
IF
Diode RMS forward current at TC = 25 °C
7
IFSM
Surge non repetitive forward current tp = 10 ms sinusoidal
20
VISO
Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s, TC = 25 °C)
tscw
Short-circuit withstand time VCE = 0.5, VCES, TJ = 125 °C, RG = 10 Ω, VGE = 12 V
10
PTOT
Total power dissipation at TC = 25 °C
65
62
Tstg
Storage temperature range
TJ
Operating junction temperature range
-55 to 150
1.
Calculated according to the iterative formula: IC TC
=
TJ max − TC
RthJC × VCE sat max TJ max , IC TC
2. Vclamp = 80% VCES, TJ =150 °C, RG = 10 Ω, VGE = 15 V.
3. Pulse width limited by maximum junction temperature and turn-off within RBSOA.
Unit TO-220FP
V 7
A 4
A A V A
A
2.5
kV
μs
24
W
°C
°C
Table 2. Thermal data
Symbol
Parameter
RthJC RthJA
Thermal resistance, junction-to-case IGBT Thermal resistance, junction-to-case diode Thermal resistance, junction-to-ambient
D²PAK, TO-220
1.9 4
62.5
Value
DPAK
2.0 4.5 100
Unit TO-220FP
5.1 °C/W
7
62.5
°C/W
DS5489 - Rev 3
page 2/31
STGB8NC60KD, STGD8NC60KD, STGF8NC60KD, STGP8NC60KD
Electrical characteristics
2
Electrical characteristics
TC = 25 °C unless otherwise specified
Table 3. Static
Symbol
Parameter
Test conditions
V(BR)CES
Collector-emitter breakdown voltage
VGE = 0 V, IC = 1 mA
VCE(sat)
Collector-emitter saturation voltage
VGE = 15 V, IC = 3 A VGE = 15 V, IC = 3 A, TJ = 125 °C
VGE(th)
Gate threshold voltage
VCE = VGE, IC = 250 μA
ICES
Collector cut-off current
VGE = 0 V, VCE = 600 V VGE = 0 V, VCE = 600 V, TJ = 125 °C (1)
IGES
Gate-emitter leakage current
VCE = 0 V, VGE = ±20 V
gfs(2)
Forward transconductance
VCE = 15 V, IC = 3 A
1. Specified by design, not tested in production. 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%.
Min. Typ. Max. Unit
600
V
2.2 2.75 V
1.8
4.5
6.5
V
0.15 mA
1
±100 nA
1.9
S
Symbol Cies Coes Cres Qg Qge Qgc
Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-emitter charge Gate-collector charge
Table 4. Dynamic Test conditions
VCE = 25 V, f = 1 MHz, VGE = 0 V
VCC = 390 V, IC = 3 A, VGE = 0 to 15 V (see Figure 19. Gate charge test circuit)
Min. Typ. Max. Unit
-
380
-
pF
-
46
-
pF
-
8.5
-
pF
-
19
-
nC
-
5
-
nC
-
9
-
nC
DS5489 - Rev 3
page 3/31
STGB8NC60KD, STGD8NC60KD, STGF8NC60KD, STGP8NC60KD
Electrical characteristics
Symbol td(on) tr
(di/dt)on
td(on) tr
(di/dt)on
tr(Voff) td(off)
tf
tr(Voff) td(off)
tf
Table 5. Switching on/off (inductive load)
Parameter Turn-on delay time Current rise time
Turn-on current slope
Turn-on delay time Current rise time
Turn-on current slope
Off voltage rise time Turn-off delay time
Current fall time
Off voltage rise time Turn-off delay time
Current fall time
Test conditions
VCC = 390 V, IC = 3 A,
RG = 10 Ω, VGE = 15 V
(see Figure 17. Test circuit for inductive load switching and Figure 20. Switching waveform)
VCC = 390 V, IC = 3 A,
RG = 10 Ω, VGE = 15 V, TJ = 125 °C
(see Figure 17. Test circuit for inductive load switching and Figure 20. Switching waveform)
VCC = 390 V, IC = 3 A,
RG = 10 Ω, VGE = 15 V
(see Figure 17. Test circuit for inductive load switching and Figure 20. Switching waveform)
VCC = 390 V, IC = 3 A,
RG = 10 Ω, VGE = 15 V, TJ = 125 °C
(see Figure 17. Test circuit for inductive load switching and Figure 20. Switching waveform)
Min. Typ. Max. Unit
-
17
-
ns
-
6
-
ns
-
655
-
A/μs
- 16.5 -
ns
-
6.5
-
ns
-
575
-
A/μs
-
33
-
ns
-
.