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S amHop Microelectronics C orp.
S DP /B 75N03L
May,2004 ver1.1
N-Channel Logic Level E nhancement ...
www.DataSheet4U.com
S amHop Microelectronics C orp.
S DP /B 75N03L
May,2004 ver1.1
N-Channel Logic Level E nhancement Mode Field E ffect
Transistor
4
P R ODUC T S UMMAR Y
V DS S
30V
F E AT UR E S
( m W ) Max
ID
70A
R DS (on)
S uper high dense cell design for extremely low R DS (ON). High power and current handling capability. TO-220 & TO-263 package.
7 @ V G S = 10V 11 @ V G S = 4.5V
D
D
G D S
G
S
G
S DP S E R IE S TO-220
S DB S E R IE S TO-263(DD-P AK)
S
ABS OLUTE MAXIMUM R ATINGS (TC =25 C unless otherwise noted)
P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous -P ulsed
a
S ymbol V DS V GS @ TJ=125 C ID IDM IS PD T J , T S TG
Limit 30 20 70 210 75 75 -65 to 175
Unit V V A A A W C
Drain-S ource Diode Forward C urrent Maximum P ower Dissipation @ Tc=25 C Operating and S torage Temperature R ange
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient R JC R JA
1
2 62.5
C /W C /W
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S DP /B 75N03L
E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted)
4
Parameter OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage
S ymbol
BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS
b
Condition
V GS = 0V, ID = 250uA V DS = 24V, V GS = 0V V GS = 16V, V DS = 0V V DS = V GS , ID = 250uA V GS = 10V, ID = 37A V GS = 4.5V, ID = 30A V GS = 10V, V DS = 10V V DS = 10V, ID = 37A
Mi...