ON2173

www.DataSheet4U.com Reflective Photosensors (Photo Reflectors) CNB1009 (ON2173) Reflective Photosensor Overview CNB1009 is a photosensor detecting the change of reflective light in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity Si phototransistor is used as the light detecting element. The two elements are located parallel in the same direction and objects are detected when passing in front of the device. Fast response : tr, tf = 6 µs (typ.) Small size, light weight 9.5±0.3 6.5±0.3 4.0±0.2 Unit : mm 12.0±0.3 (4.0) LED 2-ø2.3 T.R 1.0 7.4±0.2 1.0 (1.0) 19.0±0.3 2-9.5±0.2 1.0 Features ø2.2 (2.54) Detection of paper, film and cloth Detection of coin and bill Optical mark reading 2 Detection of position and edge 1 Start, end mark detection of magnetic tape Absolute Maximum Ratings (Ta = 25˚C) Parameter Reverse voltage (DC) Input (Light Forward current (DC) emitting diode) Power dissipation Collector to emitter voltage Output (Photo Emitter to collector voltage transistor) Collector current Collector power dissipation Temperature Operating ambient temperature Storage temperature Symbol Ratings VR IF PD*1 VCEO VECO IC PC*2 Topr 3 50 75 20 5 30 100 –25 to +85 Unit V mA mW V V mA mW ˚C ˚C (Note) ( ) Dimension is reference *1 Tstg –30 to +100 Input power derating ratio is 1.0 mW/˚C at Ta ≥ 25˚C. *2 Output power derating ratio is 1.34 mW/˚C at Ta ≥ 25˚C. Electrical Characteristics (Ta = 25˚C) P...