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SPP07N60C2 Dataheets PDF



Part Number SPP07N60C2
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description Cool MOS Power Transistor
Datasheet SPP07N60C2 DatasheetSPP07N60C2 Datasheet (PDF)

www.DataSheet4U.com Final data SPP07N60C2, SPB07N60C2 SPA07N60C2 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances P-TO220-3-31 Product Summary VDS @ Tjmax 650 R DS(on) ID P-TO263-3-2 V Ω A 0.6 7.3 P-TO220-3-1 1 P-TO220-3-31 2 3 Type SPP07N60C2 SPB07N60C2 SPA07N60C2 Package P-TO220-3-1 P-TO263-3-2 Ordering Code Q67040-S4309 Q67040-S4310 Marking 07.

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www.DataSheet4U.com Final data SPP07N60C2, SPB07N60C2 SPA07N60C2 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances P-TO220-3-31 Product Summary VDS @ Tjmax 650 R DS(on) ID P-TO263-3-2 V Ω A 0.6 7.3 P-TO220-3-1 1 P-TO220-3-31 2 3 Type SPP07N60C2 SPB07N60C2 SPA07N60C2 Package P-TO220-3-1 P-TO263-3-2 Ordering Code Q67040-S4309 Q67040-S4310 Marking 07N60C2 07N60C2 07N60C2 P-TO220-3-31 Q67040-S4331 Maximum Ratings Parameter Symbol ID Value SPP_B SPA Unit Continuous drain current TC = 25 °C TC = 100 °C A 7.3 4.6 7.31) 4.61) 14.6 230 0.5 7.3 6 ±20 ±30 Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID =5.5A, VDD =50V ID puls EAS EAR IAR 14.6 230 0.5 7.3 6 ±20 ±30 A mJ Avalanche energy, repetitive tAR limited by Tjmax 2) ID =7.3A, VDD =50V Avalanche current, repetitive tAR limited by Tjmax Reverse diode dv/dt IS = 7.3 A, VDS < VDD , di/dt=100A/µs, Tjmax =150°C A V/ns V W dv/dt VGS VGS Ptot Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C 83 32 Operating and storage temperature Page 1 Tj , Tstg -55...+150 °C 2002-08-12 www.DataSheet4U.com Final data Thermal Characteristics Parameter Characteristics SPP07N60C2, SPB07N60C2 SPA07N60C2 Symbol min. Values typ. max. Unit Thermal resistance, junction - case Thremal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) Linear derating factor Linear derating factor, FullPAK Soldering temperature, 1.6 mm (0.063 in.) from case for 10s RthJC RthJC_FP RthJA RthJA_FP RthJA - 35 - 1.5 3.9 62 80 62 0.66 0.25 260 K/W W/K °C Tsold - Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Static Characteristics Drain-source breakdown voltage VGS =0V, ID =0.25mA V(BR)DSS V(BR)DS VGS(th) IDSS 600 3.5 700 4.5 5.5 V Drain-source avalanche breakdown voltage VGS =0V, ID =7.3A Gate threshold voltage, VGS = VDS ID =350µA Zero gate voltage drain current VDS = 600 V, VGS = 0 V, Tj = 25 °C VDS = 600 V, VGS = 0 V, Tj = 150 °C µA 0.1 0.54 0.8 1 100 100 0.6 nA Ω Gate-source leakage current VGS =20V, VDS=0V IGSS RDS(on) RG - Drain-source on-state resistance VGS =10V, ID=4.6A, Tj =25°C Gate input resistance f = 1 MHz, open drain Page 2 2002-08-12 www.DataSheet4U.com Final data SPP07N60C2, SPB07N60C2 SPA07N60C2 Electrical Characteristics Parameter Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance energy related Effective output capacitance, 5) Co(tr) time related Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg VDD =350V, ID =7.3A, VGS =0 to 10V VDD =350V, ID =7.3A Symbol Conditions min. Values typ. 4 970 370 10 30 55 11 33 47 9 7.5 16.5 27 8 Unit max. 70 13.5 35 V nC gfs Ciss Coss Crss VDS ≥2*ID *RDS(on)max, ID =4.6A VGS =0V, VDS =25V, f=1MHz - S pF Effective output capacitance, 4) Co(er) VGS =0V, VDS =0V to 480V td(on) tr td(off) tf VDD =380V, VGS =0/13V, ID =7.3A, RG=12Ω, Tj=125°C - ns V(plateau) VDD =350V, ID =7.3A 1Limited only by maximum temperature 2Repetitve avalanche causes additional power losses that can be calculated as P AV =EAR*f. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 4C is a fixed capacitance that gives the same stored energy as C while V is rising from 0 to 80% V o(er) oss DS DSS . 5C o(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . Page 3 2002-08-12 www.DataSheet4U.com Final data SPP07N60C2, SPB07N60C2 SPA07N60C2 Electrical Characteristics Parameter Characteristics Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Peak rate of fall of reverse recovery current VSD trr Qrr Irrm dirr /dt Tj=25°C VGS =0V, IF=IS VR =350V, IF =IS , diF /dt=100A/µs Symbol Conditions min. Values typ. 1 750 4.9 18 550 max. 7.3 14.6 1.2 1275 - Unit IS ISM TC=25°C - A V ns µC A A/µs Typical Transient Thermal Characteristics Symbol SPP_B Rth1 Rth2 Rth3 Rth4 Rth5 Rth6 0.024 0.052 0.065 0.172 0.208 0.076 Value SPA 0.024 0.047 0.065 0.177 0.457 2.516 K/W Cth1 Cth2 Cth3 Cth4 Cth5 Cth6 R th,n T case Unit Symbol Value SPP_B 0.0001354 0.0004561 0.0007717 0.001013 0.00738 0.068 SPA 0.00012 0.000455 0.000638 0.00144 0.00737 0.412 Unit Ws/K Tj P tot (t) R th1 E xternal H eatsink C th1 C th2 C th,n T am b Page 4 2002-08-12 www.DataSheet4U.com Final data SPP07N60C2, SPB07N60C2 SPA07.


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