SBS806M

w w wOrdering . D a t number aShe et4U.com : ENN7029 SBS806M Schottky Barrier Diode SBS806M 30V, 0.5A Rectifier Applications Package Dimensions unit : mm 1310 0.25 High frequency rectification (switching regulators, converters, choppers). [SBS806M] 0.3 0.15 Features 0.85 Low forward voltage (IF=0.3A, VF max=0.4V) (IF=0.5A, VF max=0.47V). Composite type with 2 low VF SBDs in one package, facilitating high-density mounting. The SBS806M is composed of 2 chips that are equivalent to the SBS006. Ultrasmall package facilitates miniaturization in end products. 4 2.1 1.6 5 0.25 0.65 2.0 0.07 3 2 1 5 4 (Bottom view) 1 : Anode (Diode 1) 2 : No Contact 3 : Anode (Diode 2) 4 : Cathode (Diode 2) 5 : Cathode (Diode 1) SANYO : MCPH5 Specifications Absolute Maximum Ratings at Ta=25°C(Value per element) Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle Conditions 1 2 3 (Top view) Ratings 30 30 0.5 10 --55 to +125 --55 to +125 Unit V V A A °C °C Electrical Characteristics at Ta=25°C (Value per element) Parameter Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time Thermal Resistance Symbol VR VF1 VF2 IR C trr Rchj-a IR=0.5mA IF=0.3A IF=0.5A VR=10V VR=10V, f=1MHz IF=IR=100mA, See specified Test Circuit. Mounted on a ceramic board (600mm2!0...