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MX29F001T

Macronix

1M bit CMOS Flash Memory

MX29F001T/B 1M-BIT [128K x 8] CMOS FLASH MEMORY FEATURES • • • • 5.0V ± 10% for read, erase and write operation 131072x8...


Macronix

MX29F001T

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Description
MX29F001T/B 1M-BIT [128K x 8] CMOS FLASH MEMORY FEATURES 5.0V ± 10% for read, erase and write operation 131072x8 only organization Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum active current(5MHz) - 1uA typical standby current Command register architecture - Byte Programming (7us typical) - Sector Erase (8K-Byte x 1, 4K-Byte x 2, 8K Byte x 2, 32K-Byte x 1, and 64K-Byte x 1) Auto Erase (chip & sector) and Auto Program - Automatically erase any combination of sectors with Erase Suspend capability. - Automatically programs and verifies data at specified address Erase Suspend/Erase Resume – Suspends an erase operation to read data from, or program data to, a sector that is not being erased, then resumes the erase operation. Status Reply - Data polling & Toggle bit for detection of program and erase cycle completion. Chip protect/unprotect for 5V only system or 5V/12V system 100,000 minimum erase/program cycles Latch-up protected to 100mA from -1 to VCC+1V Boot Code Sector Architecture - T = Top Boot Sector - B = Bottom Boot Sector Low VCC write inhibit is equal to or less than 3.2V Package type: - 32-pin PLCC - 32-pin TSOP - 32-pin PDIP Boot Code Sector Architecture - T=Top Boot Sector - B=Bottom Boot Sector 20 years data retention GENERAL DESCRIPTION The MX29F001T/B is a 1-mega bit Flash memory organized as 128K bytes of 8 bits only MXIC's Flash memories offer the most cost-effective and reliable read/write non-volatile r...




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