www.DataSheet4U.com
BFR96 N-P-N bipolar silicon RF transistor in plastic package SOT-37
5.2max 5.5max 1.5max 9.0max
1....
www.DataSheet4U.com
BFR96 N-P-N bipolar silicon RF
transistor in plastic package SOT-37
5.2max 5.5max 1.5max 9.0max
1.0max
1
5.5max
2 3
Pinouts: 1- Base, 2- Collector, 3-Emitter
Ratings
Symbol
VCBO VCEO VEBO IC Ptot
Parameter, unit
Collector- base voltage, V Collector- emitter voltage, V Emitter- base voltage, V Collector current, mA Power dissipation, mW
Limits
20 15 3 75 700
Characteristics (T A = 25°C)
Symbol
fT hFE ICBO GPS F CC
Parameter, unit, test conditions
Transition frequency, GHz, IE=50mA, VCB=10V DC current gain, IE=50mA, VCB=10V Collector cut-off current, nA, IE= 0mA, VCB=10V Power gain, dB, IE=50mA, VCE=10V, f=500MHz Noise figure, dB IE=50mA, VCE=10V, f=500MHz Collector capacitance, pF, VCB=10V, f= 1MHz
Limits min max
3.2 50 100 13.0 4.0 2.0
Planeta
Electronic company
JSC Planeta, 2/13, Fedorovsky Ruchei, Veliky Novgorod, 173004, Russia Ph/Fax: +7 (81622) 3-17-36, 3-32-86 E-mail:
[email protected] http://www.planetasemi.com
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