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Freescale Semiconductor Technical Data
Document Number: MRF6P21190HR6 Rev. 2, 8/2005
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d ...
