DatasheetsPDF.com

H882

Shantou Huashan Electronic

NPN Silicon Transistor

www.DataSheet4U.com Shantou Huashan Electronic Devices Co.,Ltd. NPN S I L I C O N T R A N S I S T O R H882 ¨€ APPLICA...


Shantou Huashan Electronic

H882

File Download Download H882 Datasheet


Description
www.DataSheet4U.com Shantou Huashan Electronic Devices Co.,Ltd. NPN S I L I C O N T R A N S I S T O R H882 ¨€ APPLICATIONS Audio Frequency Power Amplifier , Switching Power Amplifier. ¨€ ABSOLUTE MAXIMUM RATINGS£¨ Ta=25¡æ£© T stg ¡ª¡ªStorage Temperature¡-¡-¡-¡-¡-¡-¡-¡-¡-¡- 55~150¡æ T j ¡ª¡ªJunction Temperature¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡150¡æ PC¡ª¡ªCollector Dissipation£¨ T c=25¡æ £©¡-¡-¡-¡-¡-¡-¡-¡10W PC¡ª¡ªCollector Dissipation£¨ T A =25¡æ £©¡-¡-¡-¡-¡-¡-¡-¡1W VCBO ¡ ª ¡ ªCollector-Base Voltage ¡-¡-¡-¡-¡-¡-¡-¡-¡-¡40V VCEO ¡ ª ¡ ªCollector-Emitter Voltage¡-¡-¡-¡-¡-¡-¡-¡-¡30V VEBO ¡ª¡ªEmitter-Base Voltage¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡5V IC¡ª¡ªCollector Current£¨ DC£©¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡3A Ib¡ª¡ª Base Current £¨ DC£©¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡0.6A 1¨D Emitter£¬ E 2¨D Collector£¬ C 3¨D Base£¬ B TO-126ML ¨€ ELECTRICAL CHARACTERISTICS£¨ Ta=25¡æ£© Symbol ICBO IEBO hFE VCE £¨ s at £© VBE£¨ sat£© Cob Parameter Collector-Base Cutoff Current Emitter- Base Cutoff Current Min Typ Max 1 Unit ¦Ì A Test Conditions VC B=30V, IE =0 VEB=5V, IC=0 VCE =-2V, IC=1A 1 60 0.3 1.0 45 90 ¦Ì A DC Current Gain Collector- Emitter Saturation Voltage Base -Emitter Saturation V oltage 400 0.5 2.0 V V pF MHz IC=2A, IB=-0.2A IC=2A, IB=0.2A VCB=10V£¬ IE=0£¬ f=1MHz VCE =5V£¬ IE=0.1A Output Capacitance Current Gain-Bandwidth Product fT ¨€ hFE Classification R 60¡ª 120 O 100¡ª 200 Y 160¡ª 320 G 200¡ª 400 www.DataSheet4U.com Shantou Huashan Electronic Devices Co.,Ltd. NPN S I L I C O N T R A N S I S T O R H882 ww...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)