MP4020

www.DataSheet4U.com TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Fourd Darlington Power tTransistors in One) MP4020 MP4020 High Power Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching Industrial Applications Unit: mm Small package by full molding (SIP 10 pins) High collector power dissipation (4-device operation) : PT = 4 W (Ta = 25°C) High collector current: IC (DC) = 2 A (max) High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) Zener diode included between collector and base Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Continuous base current Collector power dissipation (1 device operation) Collector power dissipation (4 devices operation) Junction temperature Storage temperature range DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Rating 50 60 ± 10 8 2 3 0.5 2.0 Unit V V V A A W JEDEC JEITA TOSHIBA ― ― 2-25A1A Weight: 2.1 g (typ.) PT Tj Tstg 4.0 150 −55 to 150 W °C °C Array Configuration 3 4 5 6 7 8 9 2 1 R1 R2 10 R1 ≈ 5 kΩ R2 ≈ 300 Ω 1 2004-07-01 www.DataSheet4U.com MP4020 Thermal Characteristics Characteristics Thermal resistance from junction to ambient (4-devices operation, Ta = 25°C) Maximum lead temperature for soldering purposes (3.2 mm from case for 10 s) TL 260 °C Symbol Max Unit ΣRth (j-a) 31.3 °C/W Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Collector cu...