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MITSUBISHI SEMICONDUCTOR <
TRANSISTOR ARRAY>
M54566P/FP
7-UNIT 400mA DARLINGTON
TRANSISTOR ARRAY
DESCRIPTION M54566P and M54566FP are seven-circuit collector-currentsynchronized Darlington
transistor arrays. The circuits are made of
PNP and
NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. PIN CONFIGURATION
INPUT
IN1→ 1 IN2→ 2 IN3→ 3 IN4→ 4 IN5→ 5 IN6→ 6 IN7→ 7 GND 8 16 →O1 15 →O2 14 →O3 13 →O4 OUTPUT 12 →O5 11 →O6 10 →O7 9 VCC
FEATURES High breakdown voltage (BV CEO ≥ 50V) High-current driving (Ic(max) = 400mA) Active L-level input Wide operating temperature range (Ta = –20 to +75°C)
16P4(P) Package type 16P2N-A(FP)
APPLICATION Interfaces between microcomputers and high-voltage, highcurrent drive systems, drives of relays and printers, and MOS-bipolar logic IC interfaces
CIRCUIT DIAGRAM
VCC 20K INPUT 8K 7.2K 2.7K OUTPUT
FUNCTION The M54566 is produced by adding
PNP transistors to M54222 inputs. Seven circuits having active L-level inputs are provided. Resistance of 8k Ω is provided between each input and
PNP transistor base. The input emitters are connected to VCC pin (pin 9). Output
transistor emitters are all connected to the GND pin (pin 8). Collector current is 400mA maximum. Collector-emitter supply voltage is 50V maximum. These ICs are optimal for drivers that are driven with N-MOS IC output and absorb c...