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MITSUBISHI SEMICONDUCTOR
M54566P/FP
7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY
DESCRIPTION M54566P and M54566FP are seven-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. PIN CONFIGURATION
INPUT
IN1→ 1 IN2→ 2 IN3→ 3 IN4→ 4 IN5→ 5 IN6→ 6 IN7→ 7 GND 8 16 →O1 15 →O2 14 →O3 13 →O4 OUTPUT 12 →O5 11 →O6 10 →O7 9 VCC
FEATURES High breakdown voltage (BV CEO ≥ 50V) High-current driving (Ic(max) = 400mA) Active L-level input Wide operating temperature range (Ta = –20 to +75°C)
16P4(P) Package type 16P2N-A(FP)
APPLICATION Interfaces between microcomputers and high-voltage, highcurrent drive systems, drives of relays and printers, and MOS-bipolar logic IC interfaces
CIRCUIT DIAGRAM
VCC 20K INPUT 8K 7.2K 2.7K OUTPUT
FUNCTION The M54566 is produced by adding PNP transistors to M54222 inputs. Seven circuits having active L-level inputs are provided. Resistance of 8k Ω is provided between each input and PNP transistor base. The input emitters are connected to VCC pin (pin 9). Output transistor emitters are all connected to the GND pin (pin 8). Collector current is 400mA maximum. Collector-emitter supply voltage is 50V maximum. These ICs are optimal for drivers that are driven with N-MOS IC output and absorb collector current. The M54566FP is enclosed in a molded small flat package, enabling space-saving design.
3K GND The seven circuits share the VCC and GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit : Ω
ABSOLUTE MAXIMUM RATINGS
Symbol VCC VCEO IC VI Pd Topr Tstg Parameter Supply voltage Collector-emitter voltage Collector current Input voltage Power dissipation Operating temperature Storage temperature
(Unless otherwise noted, Ta = –20 ~ +75 °C)
Conditions Output, H Current per circuit output, L Ta = 25 °C, when mounted on board
Ratings 10 –0.5 ~ +50 400 –0.5 ~ VCC 1.47(P)/1.00(FP) –20 ~ +75 –55 ~ +125
Unit V V mA V W °C °C
Aug. 1999
MITSUBISHI SEMICONDUCTOR
M54566P/FP
7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY
RECOMMENDED OPERATING CONDITIONS
Symbol VCC VO Supply voltage Output voltage Collector current (Current per 1 circuit when 7 circuits are coming on simultaneously) “H” input voltage “L” input voltage VCC = 5V, Duty Cycle P : no more than 10% FP : no more than 6% VCC = 5V, Duty Cycle P : no more than 30% FP : no more than 20% Parameter
(Unless otherwise noted, Ta = –20 ~ +75°C)
min 4 0 0 0 VCC –0.2 0
Limits typ 5 — — — — —
max 8 50 350
Unit V V
IC
mA 200 VCC VCC –3 V V
VIH VIL
ELECTRICAL CHARACTERISTICS
Symbol V (BR) CEO VCE (sat) II ICC h FE Parameter
(Unless otherwise noted, Ta = –20 ~ +75°C)
Test conditions ICEO = 100µA VI = VCC –3V, IC = 350mA VI = VCC –3V, IC = 200mA VI = VCC –3.5V VCC = 5V, V I = VCC –3.5V VCE = 4V, VCC = 5V, IC = 350mA, Ta = 25°C
Limits min 50 — — — — 2000 typ+ — 1.1 0.9 –0.38 1.4 10000 max — 2.2 1.6 –0.58 3.0 —
Unit V V mA mA —
Collector-emitter breakdown voltage Collector-emitter saturation voltage Input current Supply current (one circuit coming on) DC amplification factor
+ : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any conditions.
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol ton toff Parameter Turn-on time Turn-off time CL = 15pF (note 1) Test conditions Limits min — — typ 95 2500 max — — Unit ns ns
NOTE 1 TEST CIRCUIT
INPUT VCC Measured device VO
TIMING DIAGRAM
INPUT 50% 50%
RL OUTPUT
OUTPUT
PG 50Ω CL
50%
50%
ton
toff
(1) Pulse generator (PG) characteristics : PRR = 1kHz, tw = 10µs, tr = 6ns, tf = 6ns, ZO = 50Ω VI = 1 to 4V (2) Input-output conditions : RL = 30Ω, VO = 10V, VCC = 4V (3) Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes
Aug. 1999
MITSUBISHI SEMICONDUCTOR
M54566P/FP
7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY
TYPICAL CHARACTERISTICS
Output Saturation Voltage Collector Current Characteristics 400
VCC = 4V VI = 1V
Thermal Derating Factor Characteristics 2.0
Power dissipation Pd (W)
1.5
M54566P
Collector current Ic (mA)
300
Ta = 75°C
1.0
M54566FP
Ta = –20°C Ta = 25°C
200
0.5
100
0
0
25
50
75
100
0
0
0.5
1.0
1.5
2.0
Ambient temperature Ta (°C) Duty-Cycle-Collector Characteristics (M54566P) 500 500
Output saturation voltage VCE (sat) (V) Duty-Cycle-Collector Characteristics (M54566P)
Collector current Ic (mA)
Collector current Ic (mA)
400
400
300
300 200
•The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value in the circle represents the value of the simultaneously-operated circuit. •VCC = 5V •Ta = 75°C
200
•The collecto.