M464S0824DT1

www.DataSheet4U.com M464S0824DT1 M464S0824DT1 SDRAM SODIMM PC100 SODIMM 8Mx64 SDRAM SODIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION The Samsung M464S0824DT1 is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M464S0824DT1 consists of eight CMOS 4M x 16 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 144-pin glass-epoxy substrate. Three 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM. The M464S0824DT1 is a Small Outline Dual In-line Memory Module and is intended for mounting into 144-pin edge connector sockets. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable latencies allows the same device to be useful for a variety of high bandwidth, high performance memory system applications. FEATURE Performance range Part No. M464S0824DT1-L1H/C1H M464S0824DT1-L1L/C1L Max Freq. (Speed) 100MHz (10ns @ CL=2) 100MHz (10ns @ CL=3) Burst mode operation Auto & self refresh capability (4096 Cycles/64ms) LVTTL compatible inputs and outputs Single 3.3V ± 0.3V power supply MRS cycle with address key programs Latency (Access from column address) Burst length (1, 2, 4, 8 & Full page) Data scramble (Sequential & Interleave) All inputs are sampled at the positive going edge of the sy...