EC3A04B

www.DataSheet4U.com Ordering number : ENA0509 EC3A04B SANYO Semiconductors DATA SHEET N-Channel Junction Silicon FET EC3A04B Applicatins Low-Frequency General-Purpose Amplifier, Impedance Converter Applications Low-frequency general-purpose amplifier, impedance conversion, infrared sensor applications. Features Small IGSS. Small Ciss. Ultraminiature package facilitates miniaturization in end products. Halogen free compliance (UL94HB). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDSX VGDS IG ID PD Tj Tstg Conditions Ratings 30 --30 10 10 100 150 --55 to +150 Unit V V mA mA mW °C °C Electrical Characteristics at Ta=25°C Parameter Gate-to-Drain Breakdown Voltage Gate-to-Source Leakage Current Cutoff Voltage Symbol V(BR)GDS IGSS VGS(off) Conditions IG=-10µA, VDS=0V VGS=--20V, VDS=0V VDS=10V, ID=1µA Ratings min --30 --1.0 --0.18 --0.65 --2.2 typ max Unit V nA V Marking : KC Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is ...