GBC817

www.DataSheet4U.com GBC817 Description Package Dimensions 1/2 NP N E PITAX I AL P L ANAR T RANS ISTO R The GBC817 is designed for switching and AF amplifier application, suitable for driver storages and low power output storages. REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0 10 Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55 ~ +150 50 45 5 800 225 V V V mA mW Unit Characteristics Symbol BVEBO BVCEO BVCES ICES IEBO *VCE(sat) VBE(on) hFE fT Cob at Ta = 25 Min. 5 45 50 100 Typ. 100 Max. 100 100 700 1.2 630 12 MHz pF Unit V V V nA nA mV V IE=-100uA IC=10mA IC=100uA VCE=25V VEB=4V IC=500mA, IB=50mA VCE=1V, IC=300mA VCE=1V, IC=100mA VCE=5V, IC=10mA, f=100MHz VCB=10V, f=1MHz, IE=0A Test Conditions 2/2 Classification Of hFE Rank hFE A 100-250 B 160-400 C 250-630 Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any conse...