PNP EPITAXIAL TRANSISTOR
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ISSUED DATE :2004/11/18 REVISED DATE :
G9012
Description
P N P E PI TA XI A L T R AN S I S TO R
T...
Description
www.DataSheet4U.com
ISSUED DATE :2004/11/18 REVISED DATE :
G9012
Description
P N P E PI TA XI A L T R AN S I S TO R
The G9012 is designed for use in 1W output amplifier of portable radios in class B push-pull operation.
Package Dimensions
D E S1
TO-92
A
S E A T IN G PLANE
b1
L
REF. A S1 b b1 C
e1
e
b
C
Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51
REF. D E L e1 e
Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66
Absolute Maximum Ratings at Ta = 25
Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55 ~ +150 -40 -20 -5 -500 625 V V V mA mW Unit
Characteristics
Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE1 hFE2 fT Cob
at Ta = 25
Min. -40 -20 -5 112 40 100 Typ. 180 Max. -100 -100 -0.6 -1.2 -0.9 300 8 MHz pF Unit V V V nA nA V V V IC=-100uA , IE=0 IC=-1mA, IB=0 IE=-100uA, IC=0 VCB=-25V, IE=0 VEB=-3V, IC=0 IC=-500mA, IB=-50mA IC=-500mA, IB=-50mA VCE=-1V, IC=-10mA VCE=-1V, IC=-50mA VCE=-1V, IC=-500mA VCE=-1V, IC=-10mA, f=100MHz VCB=-10V, f=1MHz Test Conditions
Classification Of hFE1
Rank hFE1 G 112 - 166 H 144 - 202 L 176 - 300
1/2
ISSUED DATE :2004/11/18 REVISED DATE :
Characteristics Curve
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