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G9012

GTM

PNP EPITAXIAL TRANSISTOR

www.DataSheet4U.com ISSUED DATE :2004/11/18 REVISED DATE : G9012 Description P N P E PI TA XI A L T R AN S I S TO R T...


GTM

G9012

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Description
www.DataSheet4U.com ISSUED DATE :2004/11/18 REVISED DATE : G9012 Description P N P E PI TA XI A L T R AN S I S TO R The G9012 is designed for use in 1W output amplifier of portable radios in class B push-pull operation. Package Dimensions D E S1 TO-92 A S E A T IN G PLANE b1 L REF. A S1 b b1 C e1 e b C Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51 REF. D E L e1 e Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66 Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55 ~ +150 -40 -20 -5 -500 625 V V V mA mW Unit Characteristics Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE1 hFE2 fT Cob at Ta = 25 Min. -40 -20 -5 112 40 100 Typ. 180 Max. -100 -100 -0.6 -1.2 -0.9 300 8 MHz pF Unit V V V nA nA V V V IC=-100uA , IE=0 IC=-1mA, IB=0 IE=-100uA, IC=0 VCB=-25V, IE=0 VEB=-3V, IC=0 IC=-500mA, IB=-50mA IC=-500mA, IB=-50mA VCE=-1V, IC=-10mA VCE=-1V, IC=-50mA VCE=-1V, IC=-500mA VCE=-1V, IC=-10mA, f=100MHz VCB=-10V, f=1MHz Test Conditions Classification Of hFE1 Rank hFE1 G 112 - 166 H 144 - 202 L 176 - 300 1/2 ISSUED DATE :2004/11/18 REVISED DATE : Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserve...




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