DatasheetsPDF.com

G8550 Dataheets PDF



Part Number G8550
Manufacturers GTM
Logo GTM
Description PNP EPITAXIAL TRANSISTOR
Datasheet G8550 DatasheetG8550 Datasheet (PDF)

www.DataSheet4U.com CORPORATION G8550 Description Features P N P E P ITAX I A L T R AN S IS T O R ISSUED DATE :2004/12/27 REVISED DATE : The G8550 is designed for use in 2W output amplifier of portable radios in class B push-pull operation. *High Collector current (IC: 1.5A) *Complementary to G8050 Package Dimensions D E S1 TO-92 A b1 S E A T IN G PLANE Millimeter REF. A S1 b b1 C Min. 4.45 1.02 0.36 0.36 0.36 Max. 4.7 0.51 0.76 0.51 L REF. D E L e1 e Millimeter Min. Max. 4.44 4.7 3.3.

  G8550   G8550



Document
www.DataSheet4U.com CORPORATION G8550 Description Features P N P E P ITAX I A L T R AN S IS T O R ISSUED DATE :2004/12/27 REVISED DATE : The G8550 is designed for use in 2W output amplifier of portable radios in class B push-pull operation. *High Collector current (IC: 1.5A) *Complementary to G8050 Package Dimensions D E S1 TO-92 A b1 S E A T IN G PLANE Millimeter REF. A S1 b b1 C Min. 4.45 1.02 0.36 0.36 0.36 Max. 4.7 0.51 0.76 0.51 L REF. D E L e1 e Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66 e1 e b C Absolute Maximum Ratings (Ta = 25 Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collect Current Base Current Junction Temperature Storage Temperature Range Total Power Dissipation ,unless otherwise specified) Symbol Ratings VCBO -40 VCEO -25 VEBO -6 IC -1.5 IB -0.5 Tj +150 TsTG -55 ~ +150 PD 1 Unit V V V A A W Electrical Characteristics(Ta = 25 Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *VBE(on) *hFE1 *hFE2 *hFE3 fT Cob Min. -40 -25 -6 45 120 40 100 Typ. 9 ,unless otherwise specified) Max. Unit V V V -100 nA -100 nA -0.5 V -1.2 V -1 V 500 MHz pF Test Conditions IC=-100uA IC=-2mA IE=-100uA VCB=-35V VBE=-6V lC=-800mA, IB=-80mA lC=-800mA, IB=-80mA VCE=-1V, IC=-10mA VCE=-1V, IC=-5mA VCE=-1V, IC=-100mA VCE=-1V, IC=-800mA VCE=-10V, IC=-50mA, f=100MHz VCB=-10V, IE=0, f=1MHz 380 s, Duty Cycle 2% * Pulse Test: Pulse Width Classification Of hFE2 Rank Range C 120 ~ 200 D 160 ~ 320 E 250 ~ 500 G8550 Page: 1/2 CORPORATION Characteristics Curve ISSUED DATE :2004/12/27 REVISED DATE : Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 G8550 Page: 2/2 .


G8051S G8550 G8550S


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)