G2310

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/01/17 REVISED DATE :2005/03/22B G2310 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 60V 90m 3A The G2310 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The G2310 is universally used for all commercial-industrial applications. Description Features *Simple Drive Requirement *Small Package Outline Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0 10 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, [email protected] Continuous Drain Current3, [email protected] Pulsed Drain Current1,2 Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Symbol Rthj-a Ratings 60 20 3.0 2.3 10 1.38 0.01 -55 ~ +150 Ratings 90 Unit V V A A A W W/ Thermal Data Parameter 3 Thermal Resistance Junction-ambient Max. Unit /W 1/4 ISSUED DATE :2005/01/17 REVISED DATE :2005/03/22B Electrical Characteristics(Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Unless otherwise specified) Min. 60 1.0 Typ. 0.05 5.0 6 1.6 3 6 5 16 3 490 55 40 Max. 3.0 100 10 25 90 120 10 780 pF ns nC Unit V V/ V S nA uA uA m Test Conditi...