DatasheetsPDF.com

MHVIC915NR2 Dataheets PDF



Part Number MHVIC915NR2
Manufacturers Freescale Semiconductor
Logo Freescale Semiconductor
Description RF LDMOS Wideband Integrated Power Amplifier
Datasheet MHVIC915NR2 DatasheetMHVIC915NR2 Datasheet (PDF)

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MHVIC915NR2 Rev. 9, 5/2006 RF LDMOS Wideband Integrated Power Amplifier The MHVIC915NR2 wideband integrated circuit is designed with on - chip matching that makes it usable from 750 to 1000 MHz. This multi - stage structure is rated for 26 to 28 Volt operation and covers all typical cellular base station modulation formats. Final Application • Typical Single - Carrier N - CDMA Performance: VDD = 27 Volts, IDQ1 = 80 mA.

  MHVIC915NR2   MHVIC915NR2


Document
www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MHVIC915NR2 Rev. 9, 5/2006 RF LDMOS Wideband Integrated Power Amplifier The MHVIC915NR2 wideband integrated circuit is designed with on - chip matching that makes it usable from 750 to 1000 MHz. This multi - stage structure is rated for 26 to 28 Volt operation and covers all typical cellular base station modulation formats. Final Application • Typical Single - Carrier N - CDMA Performance: VDD = 27 Volts, IDQ1 = 80 mA, IDQ2 = 120 mA, Pout = 34 dBm, Full Frequency Band (746 to 960 MHz), IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Power Gain — 31 dB Power Added Efficiency — 21% ACPR @ 750 kHz Offset — - 50 dBc in 30 kHz Bandwidth Driver Applications • Typical Single - Carrier N - CDMA Performance: VDD = 27 Volts, IDQ1 = 80 mA, IDQ2 = 120 mA, Pout = 23 dBm, Full Frequency Band (869 894 MHz), IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13), Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 31 dB Power Added Efficiency — 21% ACPR @ 750 kHz Offset — - 60 dBc in 30 kHz Bandwidth ACPR @ 1.98 MHz Offset — - 66 dBc in 30 kHz Bandwidth • Typical GSM Performance: VDD = 26 Volts, Pout = 15 W P1dB, Full Frequency Band (921 - 960 MHz) Power Gain — 30 dB @ P1dB Power Added Efficiency = 56% @ P1dB • Capable of Handling 3:1 VSWR, @ 27 Vdc, 880 MHz, 15 Watts CW Output Power • Characterized with Series Equivalent Large - Signal Impedance Parameters • On - Chip Matching (50 Ohm Input, DC Blocked, >9 Ohm Output) • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function • On - Chip Current Mirror gm Reference FET for Self Biasing Application (1) • Integrated ESD Protection • RoHS Compliant • In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel. MHVIC915NR2 746 - 960 MHz, 15 W, 27 V SINGLE N - CDMA, GSM/GSM EDGE RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIER 16 1 CASE 978 - 03 PFP - 16 PLASTIC VRD1 VRG1 VDS1 2 Stage IC VDS2/RFout N.C. VRD1 VRG1 VDS1 GND RFin VGS1 VGS2 Quiescent Current Temperature Compensation 1 2 3 4 5 6 7 8 (Top View) 16 15 14 13 12 11 10 9 N.C. VDS2/RFout VDS2/RFout VDS2/RFout VDS2/RFout VDS2/RFout VDS2/RFout N.C. RFin VGS1 VGS2 Note: Exposed backside flag is source terminal for transistors. Figure 1. Block Diagram Figure 2. Pin Connections 1. Refer to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1987. © Freescale Semiconductor, Inc., 2006. All rights reserved. MHVIC915NR2 1 RF Device Data Freescale Semiconductor Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS Tstg TJ Value - 0.5, +65 - 0.5, +15 - 65 to +150 150 Unit Vdc Vdc °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Driver Application (Pout = 0.2 W CW) Output Application (Pout = 2.5 W CW) GSM Application (Pout = 15 W CW) Stage 1, 27 Vdc, IDQ = 80 mA Stage 2, 27 Vdc, IDQ = 120 mA Stage 1, 27 Vdc, IDQ = 80 mA Stage 2, 27 Vdc, IDQ = 120 mA Stage 1, 26 Vdc, IDQ = 50 mA Stage 2, 26 Vdc, IDQ = 140 mA Symbol RθJC 15.1 5.1 15.8 5.0 13.8 4.5 Value (1) Unit °C/W Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 0 (Minimum) A (Minimum) II (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit °C Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 27 Vdc, IDQ1 = 80 mA, IDQ2 = 120 mA, f = 880 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Bandwidth @ ±750 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF Power Gain (Pout = 23 dBm) Power Added Efficiency (Pout = 34 dBm) Input Return Loss (Pout = 23 dBm) Adjacent Channel Power Ratio (Pout = 23 dBm) Adjacent Channel Power Ratio (Pout = 34 dBm) Gain Flatness @ Pout = 23 dBm (865 MHz to 895 MHz) Bias Sense FET Drain Current VBSD = 27 V VBIAS BSG = VBIAS2 Q2 @ IDQ2 = 120 mA Gps PAE IRL ACPR ACPR GF IBSD 29 — — — — — 0.8 31 21 - 12 - 60 - 50 0.2 1.2 — — -9 - 55 — 0.4 1.6 dB % dB dBc dBc dB mA 1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. (continued) MHVIC915NR2 2 RF Device Data Freescale Semiconductor Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic Quiescent Current Accuracy over Temperature ( - 10 to 85°C) at Nominal Value (1) Gain Flatness in 30 MHz Bandwidth @ Pout = 23 dBm (800 MHz to 960 MHz) Deviation from Linear Ph.


MHPA18010N MHVIC915NR2 MHW1244N


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)