G3J14

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/03/04 REVISED DATE : G3J14 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 85m -3.7A Description The G3J14 provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. The G3J14 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. *Low On-resistance *High-speed switching *Simple Drive Requirement Features Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0 10 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 1,2 Pulsed Drain Current Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Symbol Rthj-a Ratings -30 20 -3.7 -3.0 -10 1.38 0.01 -55 ~ +150 Ratings 90 Unit V V A A A W W/ Thermal Data Parameter Thermal Resistance Junction-ambient3 Max. Unit /W 1/4 ISSUED DATE :2005/03/04 REVISED DATE : Electrical Characteristics(Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Unless otherwise specified) Min. -30 -1.0 Typ. -0.02 5 5 1 3 8 5 20 7 412 91 62 Max. -3.0 100 -1 -25 85 145 170 8 660 pF ns n...