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G2N5401

GTM

PNP EPITAXIAL PLANAR TRANSISTOR


Description
www.DataSheet4U.com CORPORATION G2N5401 Description Features P NP EP ITAX I AL PL ANAR TANSI STOR ISSUED DATE :2004/06/09 REVISED DATE :2004/11/29B The G2N5401 is designed for general purpose applications requiring high breakdown voltages. *Complementary to NPN Type G2N5551 *High Collector-Emitter Breakdown Voltage (VCEO=150V@IC=1mA)) Package Dimensions ...



GTM

G2N5401

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