G6402

www.DataSheet4U.com Pb Free Plating Product CORPORATION G6402 P-CHANNEL ENHANCEMENT MODE POWER MOSFET ISSUED DATE :2005/01/17 REVISED DATE :2005/03/22B BVDSS RDS(ON) ID -20V 65m -4.2A The G6402 provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The G6402 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Description Features Applications Ultra Low RDS(ON) Fast Switching Power Management in Notebook Computer Portable Equipment Battery Powered System. Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0 10 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 3 Continuous Drain Current 1,2 Pulsed Drain Current Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Symbol Rthj-a Ratings -20 12 -4.2 -3.4 -10 1.38 0.01 -55 ~ +150 Ratings 90 Unit V V A A A W W/ Thermal Data Parameter 3 Thermal Resistance Junction-ambient Max. Unit /W 1/4 CORPORATION Electrical Characteristics(Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ISSUED DATE :2005/01/17 REVISED DATE :2005/03/22B Unless o...