Document
www.DataSheet4U.com
GP1S093HCZ0F
GP1S093HCZ0F
Gap : 2mm Slit : 0.3mm Phototransistor Output, Compact Transmissive Photointerrupter
■ Description
GP1S093HCZ0F is a compact-package, phototransistor output, transmissive photointerrupter, with opposing emitter and detector in a molding that provides non-contact sensing. The compact package series is a result of unique technology combing transfer and injection molding. The device has a low profile, and wide gap.
■ Agency approvals/Compliance
1. Compliant with RoHS directive
■ Applications
1. General purpose detection of object presence or motion. 2. Example : printer, lens control for camera
■ Features
1. Transmissive with phototransistor output 2. Highlights : • Compact Size 3. Key Parameters : • Gap Width : 2mm • Slit Width (detector side): 0.3mm • Package : 4.5×2.6×2.9mm 4. Lead free and RoHS directive compliant
Notice The content of data sheet is subject to change without prior notice. In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
1
Sheet No.: D3-A00401EN Date Oct. 3. 2005 © SHARP Corporation
GP1S093HCZ0F
■ Internal Connection Diagram
Top view
1 2 3 3 4 4
2
1
Anode Collector Emitter Cathode
■ Outline Dimensions
Top view aʻ
(Unit : mm)
a
(C0.3)
(0.75)
4.5 2 Optical center (C0.3)
(C0.4) 2.9
2.6
a-aʼ section (0.3) Slit width
2.1
∗∗∗ ∗∗∗ ∗∗ ∗∗∗ 0.4 ∗2
0.2 0.15+ −0.1
∗3.55
3 4
2
1
• Unspecified tolerance shall be ±0.2mm. • Dimensions in parenthesis are shown for reference. • The dimensions indicated by ∗ refer to those measured from the lead base. • The dimensions shown do not include those of burrs. Burr's dimension shall be 0.15mm MAX. • The lead may be exposed at the shaded portion. • ∗∗ This portion has no solder plating. • ∗∗∗ This portion does not have any solder plating in some cases.
Product mass : approx. 0.05g Plating material : SnCu (Cu : TYP. 2%)
Country of origin
Japan
3.5±0.5
Sheet No.: D3-A00401EN
2
GP1S093HCZ0F
■ Absolute Maximum Ratings
Parameter Forward current Input Reverse voltage Power dissipation Collector-emitter voltage Emitter-collector voltage Output Collector current Collector power dissipation Total power dissipation Operating temperature Storage temperature ∗1 Soldering temperature
∗
Symbol Rating IF 50 VR 6 P 75 VCEO 35 VECO 6 20 IC 75 PC 100 Ptot Topr −25 to +85 Tstg −40 to +100 Tsol 260
(Ta=25˚C ) Unit mA V mW V V mA mW mW ˚C ˚C ˚C
1mm or more Soldering area
1 For 5s or less
■ Electro-optical Characteristics
Parameter Forward voltage Input Reverse current Output Collector dark current Collector current Transfer Collector-emitter saturation voltage characRise time teristics Response time Fall time Symbol VF IR ICEO IC VCE(sat) tr tf Condition IF=20mA VR=3V VCE=20V VCE=5V, IF=5mA IF=10mA, IC=40μA VCE=5V, IC=100μA, RL=1kΩ MIN. − − − 100 − − − TYP. 1.2 − − − − 50 50
(Ta=25˚C ) MAX. Unit 1.4 V 10 μA 100 nA 400 μA 0.4 V 150 μs 150 μs
Sheet No.: D3-A00401EN
3
GP1S093HCZ0F
Fig.1 Forward Current vs. Ambient Temperature
60 50 Forward current IF (mA) 40 30 20 10 0 25
Fig.2 Power Dissipation vs. Ambient Temperature
120 100 80 75 60 40 20 15 0 −25 0 25 50 75 85 100 Ptot
Power dissipation P, Pc, Ptot (mW)
P, Pc
0
25
50
75 85
100
Ambient temperature Ta (˚C)
Ambient temperature Ta (˚C)
Fig.3 Forward Current vs. Forward Voltage
100 25˚C 50˚C 75˚C 10 25˚C 0˚C
Fig.4 Collector Current vs. Forward Current
1.1 1 0.9 Collector current IC (mA) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 VCE=5V Ta=25˚C
Forward current IF (mA)
1 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 Forward voltage VF (V) 3
0.1 0 0 2 4 6 8 10 12 14 16 18 20 Forward current IF (mA)
Fig.5 Collector Current vs. Collector-emitter Voltage
3.3 3 2.7 Collector current IC (mA) 2.4 2.1 1.8 1.5 1.2 0.9 0.6 0.3 0 0 1 2 3 4 5 6 7 8 9 10 Collector-emitter voltage VCE (V) IF=5mA IF=30mA IF=20mA IF=10mA IF=40mA Ta=25˚C
Fig.6 Relative Collector Current vs. Ambient Temperature
120 110 100 IF5mA VCE5V
IF=50mA
Relative collector current (%)
90 80 70 60 50 40 30 20 10 0 25
0
25
50
75
Ambient temperature Ta (˚C)
Sheet No.: D3-A00401EN
4
GP1S093HCZ0F
Fig.7 Collector-emitter Saturation Voltage vs. Ambient Temperature
Collector-emitter saturation voltage VCE (sat) (V) 0.2 0.18 0.16 0.14 0.12 0.1 0.08 0.06 0.04 −25 0 25 50 75 IF=10mA IC=40μA
Fig.8 Collector Dark Current vs. Ambient Temperature
10 6 VCE20V
Collector dark current ICEO (A)
10 7
10 8
10 9
10 10
0
25
50
75
100
Ambient temperature Ta (˚C)
Ambient temperature Ta (˚C)
Fig.9 Response Time vs. Load Resistance
1 000 VCE5V IC100MA Ta25˚C
Fig.10 Test Circuit for Response Time
VCC RD Input RL Output Input Output 10% 90%
Response time (Ms)
100
tf tr td tr td ts ts tf
10
1 0.1
1
10
100
Load resistance RL (k7)
Fig.11 Detectin.