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MIG100J201HC

Toshiba Semiconductor

High Power Switching Applications Motor Control Applications

www.DataSheet4U.com MIG100J201HC TOSHIBA Power Module Silicon N Channel IGBT MIG100J201HC High Power Switching Applica...


Toshiba Semiconductor

MIG100J201HC

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www.DataSheet4U.com MIG100J201HC TOSHIBA Power Module Silicon N Channel IGBT MIG100J201HC High Power Switching Applications Motor Control Applications l Integrates inverter, brake power circuits & control circuits (IGBT drive units, protection units for over-current, under-voltage & over-temperature) in one package. l The electrodes are isolated from case. l High speed type IGBT : VCE (sat) = 2.8 V (Max.) toff = 3.0 µs (Max.) trr = 0.30 µs (Max.) l Outline : TOSHIBA 2-110A1A l Weight : 520 g Equivalent Circuit 1 2001-05-29 MIG100J201HC Maximum Ratings (Tj = 25°C) Stage Characteristic Supply voltage Collector-emitter voltage Inverter Collector current Forward current Collector power dissipation Junction temperature Supply voltage Collector-emitter voltage Collector current Brake Reverse voltage Forward current Collector power dissipation Junction temperature Control supply voltage Control Input voltage Fault output voltage Fault output current Operating temperature Module Storage temperature range Isolation voltage Screw torque AC 1 minute M5 Condition P-N power terminal ― Tc = 25°C, DC Tc = 25°C, DC Tc = 25°C ― P-N power terminal ― Tc = 25°C, DC ― Tc = 25°C, DC Tc = 25°C ― VD-GND terminal IN-GND terminal FO-GND (L) terminal FO sink current ― ― Symbol VCC VCES IC IF PC Tj VCC VCES IC VR IF PC Tj VD VIN VFO IFO TC Tstg VISO ― Ratings 450 600 100 100 300 150 450 600 30 600 30 80 150 20 20 20 14 −20 ~ +100 −40 ~ +125 2500 3 Unit V V A A W °C V V A V A W °C V V V mA °C °C V ...




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