STE30NK90Z

www.DataSheet4U.com N-CHANNEL 900V - 0.21Ω - 28A ISOTOP Zener-Protected SuperMESH™ MOSFET Table 1: General Features TYPE STE30NK90Z s s s s STE30NK90Z Figure 1: Package ID 28 A Pw 500 W VDSS 900 V RDS(on) < 0.26 Ω TYPICAL RDS(on) = 0.21 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s IDEAL FOR WELDING EQUIPMENT s ISOTOP Figure 2: Internal Schematic Diagram Table 2: Order Codes SALES TYPE STE30NK90Z MARKING E30NK90Z PACKAGE ISOTOP PACKAGING TUBE Rev.3 January 2005 1/10 STE30NK90Z www.DataSheet4U.com Table 3: Absolute Maximum ratings Symbol VDS VDGR VGS ID ID IDM ( ) PTOT VESD(G-S) dv/dt (1) VISO Tj Tstg Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate source ESD(HBM-C=100pF, R=1.5KΩ) Peak Diode Recovery voltage slope Insulation Withstand Voltage (AC-RMS) from All Four Terminals to External Heatsink Ope...