www.DataSheet4U.com
GT50J327
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT50J327
Current Resonan...
www.DataSheet4U.com
GT50J327
TOSHIBA Insulated Gate Bipolar
Transistor Silicon N Channel IGBT
GT50J327
Current Resonance Inverter Switching Application
Enhancement mode type High speed : tf = 0.19 µs (typ.) (IC = 50A) Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 50A) FRD included between emitter and collector Fourth generation IGBT TO-3P(N) (Toshiba package name) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Collector-emitter voltage Gate-emitter voltage Continuous collector current Pulsed collector current Diode forward current Collector power dissipation Junction temperature Storage temperature range DC Pulsed @ Tc = 100°C @ Tc = 25°C @ Tc = 100°C @ Tc = 25°C Symbol VCES VGES IC ICP IF IFP PC Tj Tstg Rating 600 ±25 29 50 100 20 40 56 140 150 −55 to 150 Unit V V A A A
1.Gate 2.Collector(heatsink) 3.Emitter JEDEC JEITA TOSHIBA 2-16C1C
W °C °C
Weight: 4.6 g (typ.)
Thermal Characteristics
Characteristics Thermal resistance (IGBT) Thermal resistance (diode) Symbol Rth (j-c) Rth (j-c) Max 0.89 2.7 Unit °C/W °C/W
Equivalent Circuit
Collector
Marking
Part No. (or abbreviation code) Gate Emitter TOSHIBA
GT50J327
Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish.
1
2005-02-09
GT50J327
Electrical Characteristics (Ta = 25°C)
Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Switching time Turn-on time Fall time ...