TIM1011-8L

www.DataSheet4U.com MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM1011-8L TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 28.0dBm Single Carrier Level „ HIGH POWER P1dB=39.5 dBm at 10.7 GHz to 11.7 GHz „ HIGH GAIN G1dB=6.0 dB at 10.7 GHz to 11.7 GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise SYMBOL P1dB G1dB IDS1 ( Ta= 25°C ) UNIT dBm dB A % dBc A °C MIN. 38.5 5.0 ⎯ ⎯ -42 ⎯ ⎯ TYP. MAX. 39.5 ⎯ 6.0 3.4 22 -45 3.4 ⎯ ⎯ 4.4 ⎯ ⎯ 4.4 80 CONDITIONS VDS= 9V f= 10.7 to 11.7GHz ηadd IM3 IDS2 ΔTch Two-Tone Test Po=28. 0dBm (Single Carrier Level) (VDS X IDS + Pin – P1dB) X Rth(c-c) Recommended gate resistance(Rg) : Rg= 150 Ω(MAX.) ELECTRICAL CHARACTERISTICS ( Ta= 25°C ) CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance SYMBOL gm VGSoff IDSS VGSO Rth(c-c) CONDITIONS VDS= 3V IDS= 4.0 A VDS= 3V IDS= 120mA VDS= 3V VGS= 0V IGS= -120μA Channel to Case UNIT mS V A V °C/W MIN. ⎯ -2.0 ⎯ -5 ⎯ TYP. 2400 -3.5 8.0 ⎯ 1.6 MAX. ⎯ -5.0 ⎯ ⎯ 2.5 ‹ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or...