C106A

www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA MOTOROLA Order this document by C106/D Silicon Controlled Rectifier Reverse Blocking Triode Thyristors . . . Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is important. Glassivated Surface for Reliability and Uniformity Power Rated at Economical Prices Practical Level Triggering and Holding Characteristics Flat, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat Dissipation and Durability C106 Series * *Motorola preferred devices SCRs 4 AMPERES RMS 50 thru 600 VOLTS G A K A G A K CASE 77-08 (TO-225AA) STYLE 2 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating Peak Repetitive Forward and Reverse Blocking Voltage(1) (RGK = 1 kΩ) C106F (TC = –40° to 110°C) C106A C106B C106D C106M RMS Forward Current (All Conduction Angles) Average Forward Current (TA = 30°C) Peak Non-repetitive Surge Current (1/2 Cycle, 60 Hz, TJ = –40 to +110°C) Circuit Fusing (t = 8.3 ms) Peak Gate Power Average Gate Power Peak Forward Gate Current Symbol VDRM or VRRM Value 50 100 200 400 600 4 2.55 20 1.65 0.5 0.1 0.2 Amps Amps Amps A2s Watt Watt Amp Unit Volts IT(RMS) IT(AV) ITSM I2t PGM PG(AV) IGFM 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, (cont.) positive gate voltage shall not ...