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STN690A Dataheets PDF



Part Number STN690A
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description High performance low voltage NPN transistor
Datasheet STN690A DatasheetSTN690A Datasheet (PDF)

STN690A High performance low voltage NPN transistor Features ■ Very low collector to emitter saturation voltage ■ DC current gain, hFE > 100 ■ 3 A continuous collector current t(s)■ 40 V breakdown voltage V(BR)CER ■ SOT-223 plastic package for surface mounting uccircuits in tape and reel packaging rodApplications te P■ Power management in portable equipment le■ Voltage regulation in bias supply circuits o■ Switching regulator in battery charger sapplications Ob■ Heavy load driver t(s) -Descri.

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STN690A High performance low voltage NPN transistor Features ■ Very low collector to emitter saturation voltage ■ DC current gain, hFE > 100 ■ 3 A continuous collector current t(s)■ 40 V breakdown voltage V(BR)CER ■ SOT-223 plastic package for surface mounting uccircuits in tape and reel packaging rodApplications te P■ Power management in portable equipment le■ Voltage regulation in bias supply circuits o■ Switching regulator in battery charger sapplications Ob■ Heavy load driver t(s) -Description cThe device in manufactured in low voltage NPN uplanar technology by using a “Base Island” layout. dThe resulting transistor shows exceptional high rogain performance coupled with very low Obsolete Psaturation voltage. 4 3 2 1 SOT-223 Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking STN690A N690A Package SOT-223 Packaging Tape and reel February 2009 Rev 2 1/9 www.st.com 9 Electrical ratings 1 Electrical ratings STN690A Table 2. Symbol Absolute maximum ratings Parameter Value Unit VCBO Collector-base voltage (IE = 0) 40 V VCER Collector-emitter voltage (RBE = 47 Ω) 40 V VCEO Collector-emitter voltage (IB = 0) 30 V VEBO )IC t(sICM ucPtot rodTstg PTJ Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5 ms) Total dissipation at Tamb = 25 °C Storage temperature Max. operating junction temperature leteTable 3. Thermal data soSymbol Parameter ObRthj-amb Thermal resistance junction-amb (1)_ Obsolete Product(s) -1. Device mounted on PCB area of 1 cm2. 5 3 6 1.6 -65 to 150 150 V A A W °C °C max Value 78 Unit °C/W 2/9 STN690A 2 Electrical characteristics Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 4. Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit ICBO Collector cut-off current (IE = 0) VCB = 30 V VCB = 30 V; TC = 100 °C 10 µA 100 µA Emitter cut-off current IEBO (IC = 0) VEB = 4 V t(s)V(BR)CEO (1) Collector-emitter breakdown voltage c(IB = 0) IC = 10 mA duCollector-emitter roV(BR)CER (1) breakdown voltage P(RBE = 47 Ω) IC = 10 mA oleteV(BR)CBO Collector-base breakdown voltage (IE = 0) IC = 100 µA ObsV(BR)EBO Emitter-base breakdown voltage (IC = 0) IE = 100 µA ct(s) -VCE(sat) (1) Collector-emitter Produsaturation voltage IC = 0.5 A IC = 1.2 A IC = 2 A IC = 3 A IC = 3 A TC = 100 °C IB = 5 mA IB = 20 mA IB = 20 mA IB = 100 mA IB = 100 mA leteVBE(sat) (1) Base-emitter saturation voltage IC = 1 A IB = 10 mA o VBE(on) (1) Base-emitter on voltage IC = 1 A VCE = 2 V Obs IC = 10 mA VCE = 2 V 10 30 40 40 5 0.08 0.1 0.175 0.2 0.15 0.22 0.35 0.4 0.3 0.8 1 0.8 1 100 200 400 µA V V V V V V V V V V V IC = 500 mA VCE = 2 V 100 200 400 hFE (1) DC current gain IC = 1 A VCE = 2 V 100 IC = 2 A VCE = 1 V 100 160 IC = 3 A VCE = 1 V 90 130 3/9 Electrical characteristics STN690A Table 4. Electrical characteristics (continued) Symbol Parameter Test conditions Min. Typ. Max. Unit ft Transition frequency IC = 50 mA f = 50 MHz VCE = 5 V 100 MHz Resistive load td Delay time tr Rise time ts Storage time tf Fall time IC = 3 A VCC = 20 V IB1 = -IB2 = 60 mA see Figure 8 50 120 465 80 ns ns ns ns 1. Pulse duration = 300 µs, duty cycle ≤1.5% t(s)2.1 Electrical characteristics (curves) roducFigure 2. DC current gain Figure 3. DC current gain roduct(s) - Obsolete PFigure 4. Collector-emitter saturation Obsolete Pvoltage Figure 5. Base-emitter saturation voltage 4/9 STN690A Figure 6. Switching time resistive load Electrical characteristics Figure 7. Switching time resistive load uct(s)2.2 Test circuit rodFigure 8. Resistive load switching test circuit uct(s) - Obsolete P1) Fast electronic switch Obsolete Prod2) Non-inductive resistor 5/9 Package mechanical data 3 Package mechanical data STN690A In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and products status are available at: www.st.com. ECOPACK is an ST trademark. Obsolete Product(s) - Obsolete Product(s) 6/9 STN690A Package mechanical data SOT-223 mechanical data DIM. min. mm. typ max. A A1 0.02 t(s)B 0.60 cB1 2.90 uc 0.24 rodD 6.30 Pe tee1 leE 3.30 soH 6.70 Obsolete Product(s) - ObV 0.70 3.00 0.26 6.50 2.30 4.60 3.50 7.00 1.80 0.1 0.85 3.15 0.35 6.70 3.70 7.30 10 o 0046067_L 7/9 Revision history 4 Revision history Table 5. Document revision history Date Revision Changes 20-Oct-2006 10-Feb-2009 1 Initial release. 2 Updated SOT-223 mechanical data. STN690A Obsolete Product(s) - Obsolete Product(s) 8/9 STN690A t(s)Please Read Carefully: ucInformation in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the dright to make changes, corrections, modifications or improvements, to this document, and the products a.


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