STD1NK60-1

STD1NK60-1 N-channel 600 V, 7.3 Ω typ., 1 A SuperMESH™ Power MOSFET in an IPAK package Datasheet - production data Features TAB Order code VDS RDS(on) max. ID PTOT STD1NK60-1 600 V 8.5 Ω 1 A 30 W IPAK 3 2 1 Figure 1: Internal schematic diagram D(2, TAB) G(1) S(3)  Extremely high dv/dt capability  ESD improved capability  100% avalanche tested  Gate charge minimized Applications  Low power battery chargers  Swith mode low power supplies (SMPS)  Low power, ballast, CFL (compact fluorescent lamps) Description This high voltage device is an N-channel Power MOSFET developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. Order code STD1NK60-1 AM01475v1_noZen Table 1: Device summary Marking Package D1NK60 IPAK Packing Tube February 2017 DocID030308 Rev 1 This is information on a product in full production. 1/15 www.st.com Contents Contents STD1NK60-1 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves)...................................................... 6 3 Test circuits ..............................................................................