SI4862DY

www.DataSheet4U.com Si4862DY New Product Vishay Siliconix N-Channel 16-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 16 rDS(on) (W) 0.0033 @ VGS = 4.5 V 0.0055 @ VGS = 2.5 V ID (A) 25 20 D D D D TrenchFETr Power MOSFETS: 2.5-V Rated Low 3.3-mW rDS(on) Low Gate Resistance 100% RG Tested APPLICATIONS D Synchronous Rectification D Low Output Voltage Synchronous Rectification D SO-8 S S S G 1 2 3 4 Top View 8 7 6 5 D D D D S N-Channel MOSFET G ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS 10 secs 16 "8 25 Steady State Unit V 17 13 60 A 1.3 1.6 1 - 55 to 150 W _C ID IDM IS PD TJ, Tstg 20 2.9 3.5 2.2 THERMAL RESISTANCE RATINGS Parameter Maximum Junction Junction-to-Ambient to Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71439 S-03662—Rev. B, 14-Apr-03 www.vishay.com t v 10 sec Steady State Steady State RthJA RthJF Symbol Typical 29 67 13 Maximum 35 80 16 Unit _C/W 1 Si4862DY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source...