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LN189S

GaAlAs Infrared Light Emitting Diode

Description

Infrared Light Emitting Diodes LN189S GaAlAs Infrared Light Emitting Diode Unit : mm Light source for distance measuring systems 5.0±0.3 6.0±0.3 3.4±0.2 3.0±0.2 4.0± 0.15 1.0 0.6 1 0.4±0.1 Features High-power output, high-efficiency : PO = 5.5 mW (typ.) Fast response and high-speed modulation capability : tr, tf =20 ns (typ.) Infrared light emission clo...

Panasonic Semiconductor

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