LN184

Infrared Light Emitting Diodes LN184 GaAlAs Infrared Light Emitting Diode Light source for distance measuring systems Features High-power output, high-efficiency : PO = 5 mW (typ.) Fast response and high-speed modulation capability : tr, tf = 20 ns(typ.) Infrared light emission close to monochromatics light : λP = 880 nm (typ.) Narrow directivity using spherical lenses; works well with optical systems in auto focus systems 4.5±0.2 2.0 (0.29) ,,, ø4.6±0.15 1.0 max. Unit : mm Glass window Spherical lens 12.7 min. (0.4) 2-ø0.45±0.05 2.45±0.25 2 1 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * Pulse Symbol PD IF IFP * Ratings 190 90 230 3 –25 to +85 – 40 to +100 Unit mW mA mA V ˚C ˚C ø4.0±0.1 ø5.75max. 1: Anode 2: Cathode VR Topr Tstg conditions : Pulse of f = 10 kHz and duty cycle = 50% modulated with pulse of f = 0.375 Hz (1.6 s) and duty cycle = 37.5% Electro-Optical Characteristics (Ta = 25˚C) Parameter Radiant power Peak emission wavelength Spectral half band width Forward voltage (DC) Reverse current (DC) Rise time Fall time Half-power angle Symbol PO λP ∆λ VF IR tr tf θ Conditions IF = 100mA IF = 100mA IF = 100mA IF = 100mA VR = 3V IFP = 100mA IFP = 100mA The angle in which radiant intencity is 50% min 3.5 typ 880 50 1.55 20 20 20 max Unit mW nm nm 1.9 10 V µA ns ns deg. 1 LN184 Infrared Light Emitting Diodes IF — ...