LN175

Infrared Light Emitting Diodes LN175 GaAlAs Infrared Light Emitting Diode Unit : mm Not soldered 0.8 max. For optical control systems 1.5±0.2 Features High-power output, high-efficiency : PO = 12 mW (typ.) Emitted light spectrum suited for silicon photodetectors : λP = 900 nm (typ.) Good radiant power output linearity with respect to input current Wide directivity : θ = 120 deg. (typ.) 3.9±0.25 4.5±0.15 3.5±0.15 2.1±0.15 1.6±0.15 0.8±0.1 12.8 min. (2.95) 2-1.2±0.3 2-0.45±0.15 0.45±0.15 1 2.54 2 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * Symbol PD IF IFP * Ratings 170 100 2 3 –25 to +85 – 40 to +100 Unit mW mA A V ˚C ˚C 1: Cathode 2: Anode VR Topr Tstg f = 100 Hz, Duty cycle = 0.1 % Electro-Optical Characteristics (Ta = 25˚C) Parameter Radiant power Peak emission wavelength Spectral half band width Forward voltage (DC) Reverse current (DC) Capacitance between pins Response time Half-power angle Symbol PO λP ∆λ VF IR Ct tr , t f θ Conditions IF = 100mA IF = 100mA IF = 100mA IF = 100mA VR = 3V VR = 0V, f = 1MHz IF = 100mA The angle in which radiant intencity is 50% min 7 typ 12 900 70 1.4 50 700 120 max Unit mW nm nm 1.7 10 V µA pF ns deg. 1 Infrared Light Emitting Diodes LN175 IF — Ta 120 10 2 IFP — Duty cycle tw = 10µs Ta = 25˚C 10 IFP — VF tw = 10µs f = 100Hz Ta = 25˚C IF (mA) IFP (A) 10 Allowable forward cur...