Infrared Light Emitting Diodes
LN172
GaAlAs Infrared Light Emitting Diode
Unit : mm
For optical control systems Features
High-power output, high-efficiency : PO = 12 mW (typ.) Light emitting spectrum suited for silicon photodetectors : λP = 900 nm (typ.) Good optical power output linearity with respect to input current Long lifetime, high reliability
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