Infrared Light Emitting Diodes
LN162S
GaAs Infrared Light Emitting Diode
Unit : mm
For optical control systems Features
High-power output, high-efficiency : PO = 3.5 mW (typ.) Infrared light emission close to monochromatic light : λP = 950 nm (typ.) Small ceramic package
3.75±0.3 2.0±0.2 12.5 min.
ø3.0±0.15
ø0.3±0.05 ø0.45±0.05
0.9±0.15
Absolute Maximu...
