SFF85N06Z

www.DataSheet4U.com Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com SFF85N06M SFF85N06Z 55 AMP (note 1) /60 Volts 7 mO N-Channel Trench Gate MOSFET Features: Trench gate technology for high cell density Lowest ON-resistance in the industry Enhanced operating temperature range Hermetically Sealed, Isolated Package Low Total Gate Charge Fast Switching Enhanced replacement for IRFP064 TX, TXV, S-Level screening available Improved (RDS(ON) QG) figure of merit DESIGNER’S DATA SHEET TO-254 and TO-254Z Note 1: maximum current limited by package configuration Maximum Ratings Drain - Source Voltage Gate – Source Voltage Max. Continuous Drain Current (package limited) Max. Instantaneous Drain Current (Tj limited) Max. Avalanche current Repetitive Avalanche Energy Total Power Dissipation Operating & Storage Temperature Maximum Thermal Resistance (Junction to Case) TO-254 (M) TO-254Z (Z) Symbol VDSS VGS @ TC = 25ºC @ TC = 125ºC @ TC = 25ºC @ TC = 125ºC @ L= 0.1 mH @ L= 0.1 mH @ TC = 25ºC ID1 ID2 ID3 ID4 IAR EAR PD TOP & TSTG R0JC Value 60 ±20 55 (note 1) 55 (note 1) 175 75 75 280 210 -55 to +175 0.7 (typ 0.55) Units V V A A A mJ W ºC ºC/W PIN 3 PIN 3 PIN 2 PIN 2 PIN 1 PIN 1 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FT0020A DOC www.DataSheet4...