SFF1310M

www.DataSheet4U.com PRELIMINARY SOLID STATE DEVICES, INC. 14830 Valley View Av. * La Mirada, Ca 90670 Phone: (562) 404-7855 * Fax: (562) 404-1773 SFF1310M SFF1310Z 40 AMPS 200 VOLTS 0.050 S N-CHANNEL POWER MOSFET TO-3 DESIGNER'S DATA SHEET FEATURES: Rugged construction with polysilicon gate Low RDS (on) and high transconductance Excellent high temperature stability Very fast switching speed Fast recovery and superior dv/dt performance Increased reverse energy capability Low input and transfer capacitance for easy paralleling Hermetically sealed package TX, TXV, and Space Level screening available Replaces: SMM40N20 Type MAXIMUM RATINGS CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage Continuous Drain Current Operating and Storage Temperature Thermal Resistance, Junction to Case Total Device Dissipation @ TC = 25oC @ TC = 55oC SYMBOL VDS VGS ID Top & Tstg R 2 JC PD VALUE 200 ±20 40 -55 to +150 0.5 250 190 o UNIT Volts Volts Amps o C C/W Watts PACKAGE OUTLINE: TO-3 PIN OUT: DRAIN: SOURCE: GATE: PIN 1 PIN 2 PIN 3 NOTE: All specifications are subject to change without notification. SCDs for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FT0004A www.DataSheet4U.com SFF1310M SFF1310Z PRELIMINARY SOLID STATE DEVICES, INC. 14830 Valley View Av. * La Mirada, Ca 90670 Phone: (562) 404-7855 * Fax: (562) 404-1773 ELECTRICAL CHARACTERISTICS @ TJ =25oC (Unless Otherwise Specified) RATING Drain to Source Breakdown V...