BLF2022-40

www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET M3D750 BLF2022-40 UHF power LDMOS transistor Preliminary specification 2001 April 05 www.DataSheet4U.com Philips Semiconductors Preliminary specification UHF power LDMOS transistor FEATURES High power gain Easy power control Excellent ruggedness Designed for broadband operation (2.0 to 2.2 GHz) Internal input and output matching for high gain and efficiency Improved linearity at backoff levels. 1 BLF2022-40 PINNING PIN 1 2 3 drain gate source, connected to flange DESCRIPTION APPLICATIONS Common source class-AB operation for PCN and PCS applications in the 2000 to 2200 MHz frequency range Suitable for GSM, Edge, CDMA and WCDMA applications. DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistors encapsulated in a 2-lead SOT608A flange package with a ceramic cap. The common source is connected to the mounting flange. Fig.1 Simplified outline SOT608A. 2 Top view MBL290 3 QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit. MODE OF OPERATION Two-tone, class-AB f (MHz) f1 = 2170; f2 = 2170.1 VDS (V) 28 PL (W) 40 (PEP) Gp (dB) >10.5 ηD (%) >30 dim (dBc) ≤−25 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS VGS ID Tstg Tj PARAMETER drain-source voltage gate-source voltage DC drain current storage temperature junction temperature − − − −65 − MIN. 65 ±15 5 +150 200 MAX. V V A °C °C UNIT 2001 April 05 2 www.DataSh...