BLA1011-300

www.DataSheet4U.com BLA1011-300 Avionics LDMOS transistors Rev. 01 — 3 April 2007 Product data sheet 1. Product profile 1.1 General description 300 W LDMOS pulsed power transistor for TCAS and IFF applications at frequencies from 1030 MHz to 1090 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit; tp = 50 µs; δ = 2 %. Mode of operation Pulsed class-AB f (MHz) 1030 to 1090 IDq (mA) 150 VDS (V) 32 PL (W) 300 Gp (dB) 16.5 ηD (%) 57 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features I Typical performance at frequencies between 1030 MHz and 1090 MHz, a supply voltage of 32 V, an IDq of 150 mA, a tp of 50 µs and a δ of 2 %: N Output power = 300 W N Power gain = 16.5 dB (typ) N Efficiency = 57 % (typ) I Easy power control I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for operation in 1030 MHz to 1090 MHz band I Internally matched for ease of use 1.3 Applications I RF power amplifiers for Avionics applications in the 1030 MHz to 1090 MHz frequency band www.DataSheet4U.com NXP Semiconductors BLA1011-300 Avionics LDMOS transistors 2. Pinning information Table 2. Pin 1 2 3 Pinning Description drain gate source [1] Simplified outline 1 3 2 Symbol 1 2 3 sym112 [1] connected to flange 3. Ordering information Table 3. Ordering information Package Name BLA1011-300 Description flanged LDMOST ce...