TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
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R
MID32C
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in general purpose amplifier and switching applications.
TO-251
Pinning
1 = Base 2 = Collector 3 = Emitter
.268(6.80) .252(6.40) .217(5.50) .205(5.20) 2
.022(0.55) .018(0.45) .063(1.60)...
