MID112

www.DataSheet4U.com DC COMPONENTS CO., LTD. R MID112 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR Description Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and amplifiers. TO-251 .268(6.80) .252(6.40) .217(5.50) .205(5.20) 2 Pinning 1 = Base 2 = Collector 3 = Emitter .022(0.55) .018(0.45) .063(1.60) .055(1.40) Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation(TC=25 C) Junction Temperature Storage Temperature o .284(7.20) .268(6.80) Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating 100 100 5 2 20 +150 -55 to +150 Unit V V V A W o o .032 Max (0.80) .035 Max (0.90) 1 2 3 .059(1.50) .035(0.90) .256 Min (6.50) .024(0.60) .018(0.45) .181 Typ (4.60) .095(2.40) .087(2.20) C Dimensions in inches and (millimeters) C Electrical Characteristics o Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO ICBO ICEO IEBO VCE(sat) VBE(on) hFE1 hFE2 hFE3 Cob 380µs, Duty Cycle 2% Min 100 100 500 1K 200 - Typ - Max 10 20 2 2.5 2.8 12K 100 Unit V V µA µA mA V V pF IC=1mA Test Conditions IC=30mA VCB=80V VCE=50V VBE=5V IC=2A, IB=8mA IC=2A, VCE=3V IC=0.5A, VCE=3V IC=2A, VCE=3V IC=4A, VCE=3V VCB=10V Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cutoff Current Emitter Cutof...