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LB123T

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

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www.DataSheet4U.com DC COMPONENTS CO., LTD. R LB123T DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for high voltage, high speed switching circuits, and amplifier applications . Pinning 1 = Emitter 2 = Collector 3 = Base .041(1.05) .037(0.95) .154(3.91) .150(3.81) TO-126 .304(7.72) .285(7.52) ....

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