LB123D

www.DataSheet4U.com DC COMPONENTS CO., LTD. R LB123D DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for high voltage, high speed switching circuits, and amplifier applications . TO-126ML .163(4.12) .153(3.87) .146(3.70) .136(3.44) Pinning 1 = Emitter 2 = Collector 3 = Base .044(1.12) .034(0.87) .060(1.52) .050(1.27) .148(3.75) .138(3.50) .300(7.62) .290(7.37) 1 2 3 Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pluse) Total Power Dissipation(TC=25 C) Junction Temperature Storage Temperature o .123(3.12) .113(2.87) Symbol VCBO VCEO VEBO IC IC PD TJ TSTG Rating 600 400 8 1 2 30 +150 -55 to +150 Unit V V V A A W o o .084(2.12) .074(1.87) .056(1.42) .046(1.17) .033(0.84) .027(0.68) .084(2.14) .074(1.88) .591(15.0) .551(14.0) .180 Typ (4.56) .090 Typ (2.28) .027(0.69) .017(0.43) C C Dimensions in inches and (millimeters) Electrical Characteristics o Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 hFE1 hFE2 hFE3 380µs, Duty Cycle 2% Min 600 400 8 10 10 6 Typ - Max 10 10 0.8 0.9 1.2 1.8 50 - Unit V V V µA µA V V V V - Test Conditions IC=1mA, IE=0 IC=10mA, IB=0 IE=1mA, IC=0 VCB=600V, IE=0 VBE=9V, IC=0 IC=0.1A, IB=10mA IC=0.3A, IB=30mA IC=0.1A, IB=10mA IC=0.3A, IB=30mA IC=0.3A, VCE=5V...