MSM54V32126A

E2L0053-17-Y1 www.DataSheet4U.com ¡ Semiconductor ¡ Semiconductor MSM54V32126A DESCRIPTION This version: Jan. 1998 MSM54V32126A Pr el im in ar y 131,072-Word ¥ 32-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO The MSM54V32126A is a Graphics DRAM organized in a 131,072-word ¥ 32-bit configuration. The technology used to fabricate the MSM54V32126A is OKI's CMOS silicon gate process technology. The device operates with a single 3.3 V power supply. FEATURES 131,072-word ¥ 32-bit organization Single 3.3 V power supply, ± 0.3 V tolerance Refresh: 512 cycles/8 ms Fast Page Mode with Extended Data Out (EDO) Byte write, Byte read RAS only refresh CAS before RAS refresh CAS before RAS self-refresh Hidden refresh Package options: 64-pin 525 mil plastic SSOP (SSOP64-P-525-0.80-K) (Product : MSM54V32126A-xxGS-K) 70/64-pin 400 mil plastic TSOP (Type II)(TSOPII70/64-P-400-0.65-K)(Product : MSM54V32126A-xxTS-K) xx indicates speed rank. PRODUCT FAMILY Family MSM54V32126A-45 MSM54V32126A-50 MSM54V32126A-60 Access Time (Max.) tRAC tAA tCAC tOEA 45 ns 23 ns 13 ns 13 ns 50 ns 25 ns 15 ns 15 ns 60 ns 30 ns 18 ns 18 ns Cycle Time (Min.) 90 ns 100 ns 120 ns Power Dissipation Operating (Max.) Standby (Max.) 540 mW 504 mW 486 mW 3.1 mW 1/26   www.DataSheet4U.com ¡ Semiconductor MSM54V32126A PIN CONFIGURATION (TOP VIEW) VCC DQ0 DQ1 DQ2 DQ3 VCC DQ4 DQ5 DQ6 DQ7 VSS DQ8 DQ9 DQ10 DQ11 VCC DQ12 DQ13 DQ14 DQ15 VSS NC NC NC WE RAS NC A0 A1 A2 A3 VCC 1 2 3 4 5 6 7 8 9 10 11 1...