MSM548128BL

E2L0043-17-Y1 www.DataSheet4U.com ¡ Semiconductor ¡ Semiconductor MSM548128BL 131,072-Word ¥ 8-Bit High-Speed PSRAM This version: Jan. 1998 MSM548128BL Previous version: Dec. 1996 DESCRIPTION The MSM548128BL is a 1-Mbit, high-speed and low power CMOS Pseudo Static RAM organized as 131,072-word ¥ 8-bit. The MSM548128BL is fabricated using silicon gate N well CMOS process. This process, coupled with single-transistor memory storage cells, permits maximum circuit density, minimum chip size, and high speed. MSM548128BL has Self-refresh mode in addition to Address-refresh mode and Auto-refresh mode. In Self-refresh mode the internal refresh timer and address counter refresh the dynamic memory cells automatically. This series allows low power consumption when using standby mode with Self-refresh. The MSM548128BL also features a static RAM-like write function that writes the data into the memory cell at the rising edge of WE. The MSM548128BL is pin compatible with CMOS static RAM and 256K pseudo static RAM. FEATURES Large capacity Fast access time Low power Refresh free Pin compatible Logic compatible Single power supply Refresh Package compatible Package options: 32-pin 600 mil plastic DIP 32-pin 525 mil plastic SOP : : : : : : : : : 1-Mbit (131,072-word ¥ 8 bits) 70 ns max. 200 µ A max. (standby with Self-refresh) Self refresh SRAM, 256K PSRAM SRAM WE pin, no address multiplex 5 V ± 10% 512 cycle/8 ms auto-address refresh SRAM standard package (DIP32-P-600...