DCR106-3

www.DataSheet4U.com DC COMPONENTS CO., LTD. R DISCRETE SEMICONDUCTORS DCR106-3 THRU DCR106-8 TECHNICAL SPECIFICATIONS OF SENSITIVE GATE SILICON CONTROLLED RECTIFIERS VOLTAGE RANGE - 100 to 600 Volts CURRENT - 4.0 Amperes Description * Driven directly with IC and MOS device * Feature proprietary, void-free glass passivated chips * Available in voltage ratings from 100 to 600 volts * Sensitive gate trigger current * Designed for high volume, line-powered control application in relay lamp drivers, small motor controls, gate drivers for large thyristors TO-126 .304(7.72) .285(7.52) .105(2.66) .095(2.41) Pinning 1 = Cathode, 2 = Anode, 3 = Gate .041(1.05) .037(0.95) .154(3.91) .150(3.81) .055(1.39) .045(1.14) .152(3.86) .138(3.50) Absolute Maximum Ratings(TA=25oC) Characteristic Peak Repetitive Off-State Voltage and Reverse Voltage DCR106-3 DCR106-4 DCR106-6 DCR106-8 Symbol VDRM, VRRM IT(RMS) ITSM IGM PGM PG(AV) TJ TSTG Rating 100 200 400 600 4.0 25 1.0 0.5 0.1 -40 to +110 -40 to +150 Unit V .279(7.09) .275(6.99) 1 2 3 3 Typ .052(1.32) .048(1.22) 3 Typ o o On-State RMS Current (TA=57oC, 180o Conduction Angles) Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60Hz) Forward Peak Gate Current Forward Peak Gate Power Dissipation Forward Average Gate Power Dissipation Operating Junction Temperature Storage Temperature .620(15.75) .600(15.25) A A A W W o o .032(0.81) .028(0.71) .189(4.80) .171(4.34) .022 Typ (0.55) 3 Typ o 3 Typ o C Dimensions in inches an...