DCR100-3

www.DataSheet4U.com DC COMPONENTS CO., LTD. R DISCRETE SEMICONDUCTORS DCR100-3 THRU DCR100-8 TECHNICAL SPECIFICATIONS OF SENSITIVE GATE SILICON CONTROLLED RECTIFIERS VOLTAGE RANGE - 100 to 600 Volts CURRENT - 0.8 Ampere Description * Driven directly with IC and MOS device * Feature proprietary, void-free glass passivated chips * Available in voltage ratings from 100 to 600 volts * Sensitive gate trigger current * Designed for high volume, line-powered control application in relay lamp drivers, small motor controls, gate drivers for large thyristors TO-92 .190(4.83) .170(4.33) .190(4.83) .170(4.33) 2 Typ o o Pinning 1 = Cathode, 2 = Gate, 3 = Anode Absolute Maximum Ratings(TA=25oC) Characteristic Peak Repetitive Off-State Voltage and Reverse Voltage DCR100-3 DCR100-4 DCR100-6 DCR100-8 Symbol VDRM, VRRM IT(RMS) ITSM IGM PGM PG(AV) VGRM TJ TSTG Rating 100 200 400 600 0.8 8 0.8 0.1 0.01 6.0 -40 to +110 -40 to +150 Unit V 2 Typ .500 Min (12.70) .022(0.56) .014(0.36) .100 Typ (2.54) .022(0.56) .014(0.36) On-State RMS Current (TA=57oC, 180o Conduction Angles) Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60Hz) Forward Peak Gate Current(For 3µ sec.) Forward Peak Gate Power Dissipation Forward Average Gate Power Dissipation Reverse Peak Gate Voltage Operating Junction Temperature Storage Temperature .050 Typ (1.27) A A A W W V o o 3 2 1 .148(3.76) .132(3.36) .050 Typ o o 5 Typ 5 Typ (1.27) C Dimensions in inches and (millimeters) C Electrical Characteristic...