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BAP65-02

ETL

Silicon PIN diode

www.DataSheet4U.com Silicon PIN diode FEATURES · High voltage, current controlled · RF resistor for RF switches · Low d...


ETL

BAP65-02

File Download Download BAP65-02 Datasheet


Description
www.DataSheet4U.com Silicon PIN diode FEATURES · High voltage, current controlled · RF resistor for RF switches · Low diode capacitance · Low diode forward resistance (low loss) · Very low series inductance. 1 APPLICATIONS CATHODE · RF attenuators and switches · Bandswitch for TV tuners · Series diode for mobile communication transmit/receive switch. DESCRIPTION Planar PIN diode in a SOD523 ultra small SMD plastic package. BAP65 – 02 1 2 ANODE 2 SOD523 SC-79 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC60134). SYMBOL I VR IF P tot T stg Tj PARAMETER continuous reverse voltage continuous forward current total power dissipation storage temperature junction temperature T s < 90°C CONDITIONS MIN. – – – -65 -65 MAX. 30 100 715 +150 +150 UNIT V mA mW °C °C ELECTRICAL CHARACTERISTICS T j = 25°C unless otherwise specified. SYMBOL VF IR Cd PARAMETER forward voltage reverse current diode capacitance CONDITIONS I F =50 mA V R =20 V V R = 0; f = 1 MHz V R = 1 V; f = 1 MHz V R = 3 V; f = 1 MHz r D diode forward resistance V R = 20 V; f = 1 MHz I F = 1 mA; f = 100 MHz; I F = 5 mA; f = 100 MHz; note 1 I F = 10 mA; f = 100 MHz; note 1 |s 21| 2 isolation I F = 100 mA; f = 100 MHz; V R = 0; f = 900 MHz V R = 0; f = 1800 MHz V R = 0; f = 2450 MHz |s 21| 2 insertion loss I F = 1 mA; f = 900 MHz I F = 1 mA; f = 1800 MHz I F = 1 mA; f = 2450 MHz I F = 5 mA; f = 900 MHz I F = 5 mA; f = 1800 MHz I F = 5 mA; f = 2450 MHz |s 21| 2 insertion loss I F = 10 mA; f = 900 ...




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