BAP63-05W

www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D102 BAP63-05W Silicon PIN diode Product specification Supersedes data of 2001 Apr 04 2001 May 18 Philips Semiconductors Product specification Silicon PIN diode FEATURES High speed switching for RF signals Low diode capacitance Low diode forward resistance Low series inductance For applications up to 3 GHz. APPLICATIONS RF attenuators and switches. DESCRIPTION Two planar PIN diodes in common cathode configuration in a SOT323 small SMD plastic package. handbook, halfpage BAP63-05W PINNING PIN 1 2 3 DESCRIPTION anode (a1) anode (a2) common cathode 3 3 1 2 1 Top view 2 MAM382 Marking code: W9-. Fig.1 Simplified outline (SOT323) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL Per diode VR IF Ptot Tstg Tj continuous reverse voltage continuous forward current total power dissipation storage temperature junction temperature Ts ≤ 90 °C − − − −65 −65 50 100 240 +150 +150 V mA mW °C °C PARAMETER CONDITIONS MIN. MAX. UNIT 2001 May 18 2 Philips Semiconductors Product specification Silicon PIN diode ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL Per diode VF IR Cd forward voltage reverse current diode capacitance IF = 50 mA VR = 35 V VR = 0; f = 1 MHz VR = 1 V; f = 1 MHz VR = 20 V; f = 1 MHz rD diode forward resistance IF = 0.5 mA; f = 100 MHz; note 1 IF = 1 mA; f = 100 MHz; note 1 IF = 10 mA; f = 100 MHz; note ...